A Six Level Gate-Driver Topology with 2.5 ns Resolution for Silicon Carbide MOSFET Active Gate Drive Development

被引：5
|
作者：
Judge, Paul D. [1 ]
Mathieson, Ross [1 ]
Finney, Stephen [1 ]
机构：
[1] Univ Edinburgh, Sch Engn, Inst Energy Syst, Edinburgh, Midlothian, Scotland
来源：
2021 IEEE 12TH ENERGY CONVERSION CONGRESS AND EXPOSITION - ASIA (ECCE ASIA) | 2021年
基金：
英国工程与自然科学研究理事会;
关键词：
SIC MOSFET;
D O I：
10.1109/ECCE-Asia49820.2021.9479081
中图分类号：
X [环境科学、安全科学];
学科分类号：
08 ; 0830 ;
摘要：
This paper presents a new high-bandwidth multilevel gate-drive topology for use in Silicon Carbide (SiC) Active Gate-Driver Development. The presented Modular Multilevel gate Driver (MMGD) is a voltage modulated gate-driver topology that has a resolution of 2.5 ns and a current source/sink ability of approximately 5A, allowing for driving of high-power SiC MOSFETS. The MMGD is formed of off-the-shelf components, and so is readily reproducible. The speed of the gate-driver has been found to be fast enough to effectively PWM the gate of a high-power SiC MOSFET, allowing mutliple gate-driving strategies to be investigated. Experimental results using a 1.7 kV 300 A SiC MOSFET are given to validate the MMGDs ability to actively influence the switching behaviour of a high-power device.
引用
收藏
页码：2133 / 2138
页数：6
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