A dual-band CMOS RF front-end for 2.4/5.2 GHz applications

被引：0
|
作者：
Dao, Vu Kien [1 ]
Choi, Byoung Gun [2 ]
Park, Chul Soon [1 ]
机构：
[1] Informat & Commun Univ, Sch Engn, 103-6 Munji, Taejon 305714, South Korea
[2] Elect & Telecommun Res Inst, Daejeon 305350, South Korea
来源：
2007 IEEE RADIO AND WIRELESS SYMPOSIUM | 2007年
关键词：
dual-band; RF front-end; CMOS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A dual-band RF front-end operating at 2.4 and 5.2 GHz is proposed. The dual-band RF front-end consists of a low noise amplifier and a single balance mixer which can be switched to operate at 2.4 and 5.2 GHz with the same hardware. In order to get the good performances at both frequency bands, the LNA uses a switched effective inductance in the input matching. The proposed RF front-end is designed with the 0.18 mu m CMOS process with a supply voltage of 1.8V while dissipating a power of 16 mW. The front-end has conversion gains of 28 dB and 32 dB, DSB noise figure of 3.9 dB and 3.1 dB at 10 Mhz with RF frequency of the 2.4 GHz and 5.2 GHz, respectively.
引用
收藏
页码：56 / 59
页数：4
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