ASi-Sii-defect model of light-induced degradation in silicon

被引：11

作者：

Moeller, Christian ^{[1
]}

Lauer, Kevin ^{[1
]}

机构：

[1] CiS Forschungsinst Mikrosensor & Photovolta GmbH, D-99099 Erfurt, Germany

来源：

PROCEEDINGS OF THE 4TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2014) | 2014年 / 55卷

关键词：

light-induced degradation; indium-doped silicon; irradiation damage; BORON; DIFFUSION;

D O I：

10.1016/j.egypro.2014.08.025

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The observation of light-induced degradation (LID) in indium-doped silicon has led to the idea of an A(Si)-Si-i-defect responsible for LID. Generation of silicon self interstitials (Si-i) leads, in consequence of the A(Si)-Si-i-defect model, to an enhancement or activation of LID, respectively. This was observed several decades ago at the beginning of solar cell investigation for space application. Boron-doped float-zone (FZ) silicon solar cells show LID after electron irradiation, gallium-doped FZ solar cells do not. The literature data is summarized and interpreted in view of the ASi-Sii-defect model. (C) 2014 Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/3.0/).

引用

页码：559 / 563

页数：5

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