Controlled Tuning of Thin Film Deposition of IrO2 on Si Using Pulsed Laser Ablation Technique

We have successfully grown a stable phase of polycrystalline IrO2 on Si (100) substrate. We have found that the phase of IrO2 can be controllably tuned to obtain either Ir or IrO2, using pulsed laser ablation technique. O-2, conditions during the deposition influences the phase directly and drastically whereas annealing conditions do not show any variation in the phase of thin film. X-ray diffraction and X-ray photoetnission experiments confirm both Ir and IrO2 can be successively grown on Si using IrO2, target. Also, the morphology is found to be influenced by the O-2 conditions.