Electrical properties of high permittivity ZrO2 gate dielectrics on strained-Si

被引：26

作者：

Maiti, CK ^{[1
]}

Dalapati, GK

Chatterjee, S

Samanta, SK

Varma, S

Patil, S

机构：

[1] Indian Inst Technol, Dept Elect, Kharagpur 721302, W Bengal, India

[2] Indian Inst Technol, ECE, Kharagpur 721302, W Bengal, India

[3] Inst Phys, Bhubaneswar 751005, Orissa, India

来源：

SOLID-STATE ELECTRONICS | 2004年 / 48卷 / 12期

关键词：

high-k gate dielectric; strained-Si; heterostructure MOSFET; ZrO2; plasma deposition; conduction mechanism;

D O I：

10.1016/j.sse.2004.04.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Deposition and electrical properties of high dielectric constant (high-k) ultrathin ZrO2 films on tensilely strained silicon (strained-Si) substrate are reported. ZrO2 thin films have been deposited using a microwave plasma enhanced chemical vapor deposition technique at a low temperature (150 degreesC). Metal insulator semiconductor (MIS) structures are used for high frequency capacitance-voltage (C-V), current voltage (I-V), and conductance-voltage (G-V) characterization. Using MIS capacitor structures, the reliability and the leakage current characteristics have been studied both at room and high temperature. Schottky conduction mechanism is found to dominate the current conduction at a high temperature. Observed good electrical and reliability properties suggest the suitability of deposited ZrO2 thin films as an alternative as gate dielectrics. Compatibility of ZrO2 as a gate dielectric on strained-Si is shown. (C) 2004 Elsevier Ltd. All rights reserved.

引用

页码：2235 / 2241

页数：7

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