Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate

被引：49

作者：

Cirlin, G. E. ^{[1
,2
,3
]}

Bouravleuv, A. D. ^{[2
,3
]}

Soshnikov, I. P. ^{[2
,3
]}

Samsonenko, Yu. B. ^{[1
,2
,3
]}

Dubrovskii, V. G. ^{[2
,3
]}

Arakcheeva, E. M. ^{[3
]}

Tanklevskaya, E. M. ^{[3
]}

Werner, P. ^{[4
]}

机构：

[1] RAS, Inst Analyt Instrumentat, St Petersburg 190103, Russia

[2] RAS, St Petersburg Phys & Technol Ctr Res & Educ, St Petersburg 194021, Russia

[3] RAS, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[4] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

来源：

NANOSCALE RESEARCH LETTERS | 2010年 / 5卷 / 02期

关键词：

Molecular beam epitaxy; Nanowires; GaAs; Solar cells; Photovoltaic properties; MOLECULAR-BEAM EPITAXY; SOLAR-CELLS; TEMPERATURE;

D O I：

10.1007/s11671-009-9488-2

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the molecular beam epitaxy growth of Au-assisted GaAs p-type-doped NW arrays on the n-type GaAs(111)B substrate and their photovoltaic properties. The samples are grown at different substrate temperature within the range from 520 to 580 A degrees C. It is shown that the dependence of conversion efficiency on the substrate temperature has a maximum at the substrate temperature of 550 A degrees C. For the best sample, the conversion efficiency of 1.65% and the fill factor of 25% are obtained.

引用

页码：360 / 363

页数：4

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