Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors

被引：7

作者：

Lin, H. -K. ^{[1
]}

Lin, Y. -C. ^{[1
]}

Huang, F. -H. ^{[1
]}

Fan, T. -W. ^{[1
]}

Chiu, P. -C. ^{[1
]}

Chyi, J. -I. ^{[1
]}

Ko, C. -H. ^{[2
]}

Kuan, T. -M. ^{[2
]}

Hsieh, M. -K. ^{[2
]}

Lee, W. -C. ^{[2
]}

Wann, C. H. ^{[2
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Jhongli 32001, Taiwan

[2] Taiwan Semicond Mfg Co, Exploratory Res Div, Hsinchu, Taiwan

来源：

SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 04期

关键词：

InAs/AlSb; HEMT; IMPACT IONIZATION; PERFORMANCE;

D O I：

10.1016/j.sse.2010.01.013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Conventional InAs/AlSb HEMTs suffer from chemical instability in materials and high kink current. To avoid these drawbacks, this work proposes a novel layer structure of an InAsSb/AlSb HEMT and a novel two-step passivation process. Performance improvements are reduced dc output conductance by approximately 4.6 times at V-DS = 0.5 V and I-D = 100 mA/mm, and gate leakage to 1 x 10(-3) mA/mm from 4 at V-GS = -1.2 V and V-DS = 0.8 V compared with those of two InAs/AlSb HEMTs, one with the conventional one-step and the other with the proposed two-step passivation process. Both dc and rf performances show strong evidences of impact ionization suppression. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：475 / 478

页数：4