Characterization of n-type layers formed in (11-20)-4H-SiC by phosphorus ion implantation

被引：10
|
作者：
Yanagida, N.
Ishibashi, K. [1 ]
Uchiumi, S.
Inada, T.
机构：
[1] Hosei Univ, Grad Sch Engn, Koganei, Tokyo 1848584, Japan
[2] Waseda Univ, Nano Technol Res Ctr, Shinjuku Ku, Tokyo 1620041, Japan
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 257卷
关键词：
SiC; ion implantation; electrical profile; SIMS profile; RBS;
D O I：
10.1016/j.nimb.2007.01.241
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Phosphorus ions have been implanted in p-type, (11-20)-oriented 414-SiC to fabricate highly doped n-type layers, with a box-shaped electrical profile, in the substrate. It has been shown that an implantation-induced amorphous layer epitaxially re-crystallizes during annealing at 1000 degrees C. Electrical profile measurements have been successfully made on samples annealed at/above 1200 degrees C. An similar to 100 nm-thick n-type layer, uniformly doped at carrier concentrations of similar to 1 x 10(20) cm(-3), is formed after annealing at 1500 degrees C and an extremely low resistivity of 1.4 x 10(-3) ohm CM is achieved in the P-implanted layer. It is also demonstrated that a considerable large number of P atoms are lost from the substrate during annealing above 1400 degrees C. The surface morphology of P-implanted 4H-SiC is deteriorated when annealed at 1600 degrees C. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：203 / 207
页数：5
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