Residual Stress Analysis of HfO2/SiO2 multilayer coatings using finite element method

被引：0

作者：

Gao, Chunxue ^{[1
]}

Zhao, Zhiwei ^{[1
]}

机构：

[1] Southeast Univ, Sch Elect Sci & Engn, 2 Sipailou Rd, Nanjing 210096, Jiangsu, Peoples R China

来源：

2015 IEEE INTERNATIONAL VACUUM ELECTRONICS CONFERENCE (IVEC) | 2015年

关键词：

residual stress; HfO2/SiO2; finite element method;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

HfO2/SiO2 multilayer coatings are usually applied to precise optical instruments and large optical systems. An equivalent reference temperature (ERT) technique had been proposed and used to model and evaluate the intrinsic strains of layered structures. This study has used finite element method and the equivalent reference temperature (ERT) technique to simulate the residual stress in HfO2/SiO2 multilayer coatings.

引用

页数：2