Effect of post-annealing on the optoelectronic properties of ZnO:Ga films prepared by pulsed direct current magnetron sputtering

被引：59

作者：

Yen, W. T. ^{[1
]}

Lin, Y. C. ^{[1
]}

Yao, P. C. ^{[2
]}

Ke, J. H. ^{[1
]}

Chen, Y. L. ^{[1
]}

机构：

[1] Natl Changhua Univ Educ, Dept Mechatron Engn, Changhua 50007, Taiwan

[2] DaYeh Univ, Dept Mat Sci & Engn, Changhua 515, Taiwan

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 14期

关键词：

ZnO:Ga; Annealing; Pulsed direct current magnetron sputtering; Optoelectronic properties; Near-infrared reflective; ZINC-OXIDE FILMS; THIN-FILMS; OPTICAL-PROPERTIES; ANNEALING TEMPERATURE; GROWTH; R.F; XPS;

D O I：

10.1016/j.tsf.2009.10.149

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, highly conductive films of ZnO:Ga (GZO) were deposited by pulsed direct current magnetron sputtering to explore the effect of post-annealing on the structural, electrical and optical properties of the films. XRD patterns showed that after annealing, the intensity of c-axis preferentially oriented GZO (002) peak was apparently improved. GZO film annealing at 300 degrees C for 0.5 h exhibits lowest resistivity of 1.36x10(-4) Omega cm. In addition, the film shows good optical transmittance of 88% with optical band gap, 3.82 eV. Carrier concentration and optical band gap both decreases with the annealing temperature. Besides, the near-infrared transmittance at 1400 nm is below 5%, while the reflectivity at 2400 nm is as high as 70%. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：3882 / 3885

页数：4

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