Equilibrium analysis of CVD of yttria-stabilized zirconia

被引:8
作者
Varanasi, VG [1 ]
Besmann, TM
Anderson, TJ
机构
[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[2] Oak Ridge Natl Lab, Div Met & Ceram, Surface Proc & Mech Grp, Oak Ridge, TN 37830 USA
关键词
D O I
10.1149/1.1828951
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The calculations performed in this study indicate that efficient deposition of tetragonal yttria-stabilized zirconia (YSZ) by chemical vapor deposition (CVD) is feasible using metal chloride precursors (Zr-Y-C-O-H-Cl system). As reported in the literature, this work demonstrates that high oxygen content is necessary to efficiently utilize metal chloride precursors for depositing tetragonal YSZ with CVD. Unwanted carbon impurities can be avoided by using a low hydrogen to carbon ratio (inlet H/C > 1), high temperatures (T greater than or equal to 500degreesC), and low pressures (P less than or equal to 1 bar). (C) 2004 The Electrochemical Society.
引用
收藏
页码:C7 / C14
页数:8
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