Thermodynamic evidence for surfactant behaviour of Sb in the growth of Ge on Si(001)

被引：14

作者：

Jenkins, SJ ^{[1
]}

Srivastava, GP ^{[1
]}

机构：

[1] Univ Exeter, Dept Phys, Exeter EX4 4QL, Devon, England

来源：

SURFACE SCIENCE | 1998年 / 398卷 / 03期

基金：

英国工程与自然科学研究理事会;

关键词：

antimony; density functional calculations; germanium; growth; low index single crystal surfaces; semiconducting surfaces; silicon; surface thermodynamics;

D O I：

10.1016/S0039-6028(98)80032-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thermodynamic evidence of the Stranski-Krastanov growth of Ge on the Si(001) surface is provided, based upon ab initio density functional theory calculations. Island formation is predicted to begin at a Ge coverage of around three monolayers, in good agreement with recent experimental findings. The presence of a terminating Sb layer is shown to promote epitaxial growth. The analysis of energetic data in terms of surface free energy as a function of chemical potential provides a general theoretical signature for both Stranski-Krastanov and epitaxial growth modes, (C) 1998 Elsevier Science B.V.

引用

页码：L308 / L313

页数：6

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