Indium phosphide ICs unleash the high-frequency spectrum

被引：20

作者：

Raghavan, G ^{[1
]}

Sokolich, M

Stanchina, WE

机构：

[1] Conexant Syst Inc, Newbury Park, CA 91320 USA

[2] HRL Labs LLC, Microelect Lab, Malibu, CA USA

[3] HRL Labs LLC, Integrated Circuit Proc Engn Dept, Malibu, CA USA

[4] Intel Corp, Santa Clara, CA 95051 USA

来源：

IEEE SPECTRUM | 2000年 / 37卷 / 10期

关键词：

Heterojunction bipolar transistors - High electron mobility transistors - Integrated circuit layout - LSI circuits - MESFET devices - Microprocessor chips - Semiconducting indium compounds;

D O I：

10.1109/6.873917

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Traditionally, microwave circuit designers interested in exploiting these frequencies have turned to discrete components, despite the expense of assembling and packaging them and the dearth of buyers that can afford the result. Today this scenario was rapidly being transformed by indium phosphide heterojunction bipolar transistors (HBTs), a technology that was currently yielding large-scale integrated (LSI) circuits packing 1000 to 10000 transistors on a chip and operating at over 65 GHz. Success in integrating such fast, dense transistors have bred numerous analog, digital, and mixed-mode ICs having unprecedented performance.

引用

页码：47 / 52

页数：6