Magnetoresistance of itinerant electrons interacting with local spins -: art. no. 184420

被引:1
作者
Gómez-Santos, G
Fratini, S
Guinea, F
机构
[1] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain
[2] Univ Autonoma Madrid, Inst Nicolas Cabrera, E-28049 Madrid, Spain
[3] CNRS, Etud Proprietes Elect Solides Lab, F-38042 Grenoble 9, France
[4] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain
关键词
D O I
10.1103/PhysRevB.70.184420
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Transport properties of itinerant electrons interacting with local spins are analyzed as a function of the bandwidth, W, the exchange interaction, J, and the band filling, n, near the band edge. Numerical results have been obtained within the dynamical mean-field approximation and interpreted with the help of analytical treatments. If spatial correlations of the magnetic fluctuations can be neglected, and defining rho(m) as the magnetization dependent resistivity, we find that deltarho/rho(0)similar ton(-4/3) for J/W, nmuch less than1 (weak coupling, low density limit), deltarho/rho(0)similar toconst, for J/Wmuch greater than1, nmuch less than1 (double exchange, low density limit), where deltarho=partial derivativerho/partial derivativem(2)\(2)(m)-->0. Possible limitations from ignoring both localization effects and critical fluctuations are also considered.
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页码:1 / 6
页数:6
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