Nitrogen doping in purely sp2 bonded forms of carbon

被引：28
作者：
Jungnickel, G [1 ]
Sitch, PK
Frauenheim, T
Eggen, BR
Heggie, MI
Latham, CD
Cousins, CSG
机构：
[1] Tech Univ, Inst Phys, D-09107 Chemnitz, Germany
[2] Univ Sussex, Sch Chem Phys & Environm Sci, Brighton BN1 9QJ, E Sussex, England
[3] Univ Exeter, Dept Phys, Exeter EX4 4QL, Devon, England
来源：
PHYSICAL REVIEW B | 1998年 / 57卷 / 02期
关键词：
D O I：
10.1103/PhysRevB.57.R661
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We postulate wide-band-gap forms of carbon that locally have a planar bonding configuration as in graphite and, in contrast to diamond, are promising candidates for n-type doping by nitrogen. The presence of localized pi bonds makes them as stable as fullerene C-60 and causes large band gaps of approximate to 3 eV to appear. The allotropes accept both nitrogen and boron as substitutional dopants, making them potentially extremely useful for high-power, high-temperature, and high-speed device applications.
引用
收藏
页码：R661 / R665
页数：5
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