Nitrogen doping in purely sp2 bonded forms of carbon

被引：28

作者：

Jungnickel, G ^{[1
]}

Sitch, PK

Frauenheim, T

Eggen, BR

Heggie, MI

Latham, CD

Cousins, CSG

机构：

[1] Tech Univ, Inst Phys, D-09107 Chemnitz, Germany

[2] Univ Sussex, Sch Chem Phys & Environm Sci, Brighton BN1 9QJ, E Sussex, England

[3] Univ Exeter, Dept Phys, Exeter EX4 4QL, Devon, England

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.57.R661

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We postulate wide-band-gap forms of carbon that locally have a planar bonding configuration as in graphite and, in contrast to diamond, are promising candidates for n-type doping by nitrogen. The presence of localized pi bonds makes them as stable as fullerene C-60 and causes large band gaps of approximate to 3 eV to appear. The allotropes accept both nitrogen and boron as substitutional dopants, making them potentially extremely useful for high-power, high-temperature, and high-speed device applications.

引用

页码：R661 / R665

页数：5

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