Deposition of bulk GaN from solution in gallium under high N2 pressure on silicon carbide and sapphire substrates

被引：18

作者：

Bochowski, M ^{[1
]}

Grzegory, I ^{[1
]}

Krukowski, S ^{[1
]}

Lucznik, B ^{[1
]}

Wróblewski, M ^{[1
]}

Kamler, G ^{[1
]}

Borysiuk, J ^{[1
]}

Kwiatkowski, P ^{[1
]}

Jasik, K ^{[1
]}

Porowski, S ^{[1
]}

机构：

[1] Polish Acad Sci, High Pressure Res Ctr, PL-01142 Warsaw, Poland

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 270卷 / 3-4期

关键词：

high-pressure growth from solution; seeded growth; gallium nitride;

D O I：

10.1016/j.jcrysgro.2004.06.060

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Results of high-pressure directional growth of GaN on foreign substrates: SiC, sapphire and GaN/sapphire MOCVD templates are presented. The role of nitrogen pressure and supersaturation in the growth process is discussed. The conditions for stable growth of the nitride are determined. The results of the crystallization process are compared with those obtained for directional growth on pressure grown GaN crystals. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：409 / 419

页数：11

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