Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with FT=143 GHz

被引：39

作者：

Sun, Haifeng ^{[1
]}

Alt, Andreas R. ^{[1
]}

Benedickter, Hansruedi ^{[1
]}

Bolognesi, C. R. ^{[1
]}

Feltin, Eric ^{[2
]}

Carlin, Jean-Francois ^{[2
]}

Gonschorek, Marcus ^{[2
]}

Grandjean, Nicolas ^{[2
]}

机构：

[1] ETH, Millimeter Wave Elect Grp, CH-8092 Zurich, Switzerland

[2] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 09期

关键词：

GATE ALGAN/GAN HEMTS; PERFORMANCE;

D O I：

10.1143/APEX.3.094101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on ultrahigh-speed 80 nm AlInN/GaN high-electron-mobility transistors (HEMTs) grown on (111) high-resistivity silicon substrates. The devices feature a peak measured transconductance g(M) = 415 mS/mm, a maximum current of 1.43 A/mm with a ratio I-ON/I-OFF > 10(6), and current gain and maximum oscillation cutoff frequencies of f(T) = 143 GHz and f(MAX) = 176 GHz, which are the highest cutoff frequencies ever achieved for any GaN HEMTs on silicon substrates. The results demonstrate the outstanding potential of AlInN/GaN HEMTs grown on silicon for low-cost high-performance millimeter-wave electronics. (c) 2010 The Japan Society of Applied Physics

引用

页数：3

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