The effect of microstructure and secondary phase on magnetic and electrical properties of La-deficient La1-xMnO3-δ (0 ≤ x ≤ 0.3) films

被引：25
作者：
Chen, GJ [1 ]
Chang, YH [1 ]
Hsu, HW [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2000年 / 219卷 / 03期
关键词：
microstructure; lanthanum deficiency; magnetoresistance; magnetization; resistivity;
D O I：
10.1016/S0304-8853(00)00463-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of La-deficiency on the microstructure, magnetic and electrical properties of lanthanum manganite films are reported. By high-resolution transmission electron microscopy observations, the irradiation damages were found due to the introduction of vacancies. With proper control of La ions, the magnetic transition temperature was elevated to higher than room temperature. An insulator-metal transition (I-M transition) was observed for all La1-xMnO3-delta films. The large negative magnetoresistance effect is demonstrated. In addition, the influence of the secondary-phase Mn3O4 on the properties of the films is studied. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：317 / 324
页数：8
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