The structure and dielectric properties of thin barium zirconate titanate films obtained by RF magnetron sputtering

被引：4

作者：

Tumarkin, A. V. ^{[1
]}

Razumov, S. V. ^{[1
]}

Gagarin, A. G. ^{[1
]}

Altynnikov, A. G. ^{[1
]}

Stozharov, V. M. ^{[2
]}

Kaptelov, E. Yu. ^{[3
]}

Senkevich, S. V. ^{[3
]}

Pronin, I. P. ^{[3
]}

机构：

[1] St Petersburg State Electrotech Univ, St Petersburg 197376, Russia

[2] Herzen State Pedag Univ, St Petersburg 191186, Russia

[3] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2016年 / 42卷 / 02期

基金：

俄罗斯基础研究基金会;

关键词：

Technical Physic Letter; Strontium Titanate; Ferroelectric Phase Transition; Ceramic Target; Zirconium Atom;

D O I：

10.1134/S1063785016020140

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Submicron thin layers of BaZr (x) Ti1-x O-3 are grown in-situ by RF magnetron sputtering of a ceramic target (x = 0.50) on a substrate of Pt/r-cut leucosapphire Al2O3. It is shown that the composition of the ferroelectric layer is not identical to the composition of the sputtered target and is shifted toward barium zirconate. The reasons for such behavior are discussed. The obtained samples are characterized by high breakdown voltages (1 MV/cm and higher). The structural and high-frequency dielectric properties are studied, and high tunability of the capacitance of thin layers is revealed.

引用

页码：143 / 145

页数：3

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