Synthesis of Wafer-Scale Graphene with Chemical Vapor Deposition for Electronic Device Applications

被引：81

作者：

Sun, Baojun ^{[1
,2
]}

Pang, Jinbo ^{[1
]}

Cheng, Qilin ^{[1
]}

Zhang, Shu ^{[1
,3
]}

Li, Yufen ^{[1
]}

Zhang, Congcong ^{[1
]}

Sun, Dehui ^{[1
]}

Ibarlucea, Bergoi ^{[4
,5
,6
]}

Li, Yang ^{[7
]}

Chen, Duo ^{[1
,8
]}

Fan, Huaimin ^{[1
,2
]}

Han, Qingfang ^{[1
,2
]}

Chao, Mengxin ^{[1
,3
]}

Liu, Hong ^{[1
,9
]}

Wang, Jingang ^{[1
]}

Cuniberti, Gianaurelio ^{[4
,5
,6
]}

Han, Lin ^{[10
]}

Zhou, Weijia ^{[1
]}

机构：

[1] Univ Jinan, Collaborat Innovat Ctr Technol & Equipment Biol D, Inst Adv Interdisciplinary Res iAIR, Jinan 250022, Shandong, Peoples R China

[2] Univ Jinan, Coll Biol Sci & Technol, Jinan 250022, Shandong, Peoples R China

[3] Univ Jinan, Sch Chem & Chem Engn, Jinan 250022, Shandong, Peoples R China

[4] Tech Univ Dresden, Inst Mat Sci, D-01069 Dresden, Germany

[5] Tech Univ Dresden, Max Bergmann Ctr Biomat, D-01069 Dresden, Germany

[6] Tech Univ Dresden, Ctr Adv Elect Dresden, D-01069 Dresden, Germany

[7] Univ Jinan, Sch Informat Sci & Engn, Jinan 250022, Shandong, Peoples R China

[8] Univ Jinan, Sch Mat Sci & Engn, Jinan 250022, Peoples R China

[9] Shandong Univ, State Key Lab Crystal Mat, Ctr Bio & Micro Nano Funct Mat, 27 Shandanan Rd, Jinan 250100, Peoples R China

[10] Shandong Univ, Inst Marine Sci & Technol, Qingdao 266237, Shandong, Peoples R China

来源：

ADVANCED MATERIALS TECHNOLOGIES | 2021年 / 6卷 / 07期

基金：

中国国家自然科学基金;

关键词：

chemical vapor deposition; graphene; h‐ BN; integrated circuits; roll to roll; transistors; wafer scale; FEW-LAYER GRAPHENE; HEXAGONAL BORON-NITRIDE; FIELD-EFFECT TRANSISTORS; SINGLE-CRYSTAL GRAPHENE; LARGE-AREA GRAPHENE; NITROGEN-DOPED GRAPHENE; HIGH-QUALITY GRAPHENE; DER-WAALS HETEROSTRUCTURES; CVD-GROWN GRAPHENE; P-N-JUNCTIONS;

D O I：

10.1002/admt.202000744

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The first isolation of graphene opens the avenue for new platforms for physics, electronic engineering, and materials sciences. Among several kinds of synthesis approaches, chemical vapor deposition is most promising for the growth at wafer-scale, which is compatible with the Si-based electronic device integration protocols. In this review, the types, properties, and synthesis methods of graphene are first introduced. Many details of wafer-scale graphene synthesis by chemical vapor deposition strategies are given, including the wafer-scale single crystal metal and alloy preparation, roll to roll synthesis over Cu, roll to roll electrochemical transfer technique. Besides, the batch-to-batch synthesis are highlighted for direct graphene over dielectric substrates such as sapphire and Si/SiO2. The electronic transport and transparent conductance of the wafer-scale graphene are compared with high-quality single crystal. The progress and proof-of-the-concept are briefly recalled in graphene-based electronics such as transistors, sensors, integrated circuits, and spin transport valves. Eventually, the readers are provoked with the current challenges as well as the future opportunities.

引用

页数：79

共 1535 条

[31] Graphene synthesis on Fe foil using thermal CVD [J].