Robust graphene-based molecular devices

被引:49
作者
El Abbassi, Maria [1 ,2 ,3 ]
Sangtarash, Sara [4 ,5 ]
Liu, Xunshan [6 ]
Perrin, Mickael Lucien [1 ]
Braun, Oliver [1 ,2 ]
Lambert, Colin [4 ]
van der Zant, Herre Sjoerd Jan [3 ]
Yitzchaik, Shlomo [7 ]
Decurtins, Silvio [6 ]
Liu, Shi-Xia [6 ]
Sadeghi, Hatef [4 ,5 ]
Calame, Michel [1 ,2 ,8 ]
机构
[1] Empa, Swiss Fed Labs Mat Sci & Technol, Transport Nanoscale Interfaces Lab, Dubendorf, Switzerland
[2] Univ Basel, Dept Phys, Basel, Switzerland
[3] Delft Univ Technol, Kavli Inst Nanosci, Delft, Netherlands
[4] Univ Lancaster, Dept Phys, Lancaster, England
[5] Univ Warwick, Sch Engn, Coventry, W Midlands, England
[6] Univ Bern, Dept Chem & Biochem, Bern, Switzerland
[7] Hebrew Univ Jerusalem, Inst Chem, Jerusalem, Israel
[8] Univ Basel, Swiss Nanosci Inst, Basel, Switzerland
基金
欧洲研究理事会; 英国工程与自然科学研究理事会; 英国科研创新办公室;
关键词
SELF-ASSEMBLED MONOLAYERS; JUNCTIONS; TRANSISTOR; TRANSPORT;
D O I
10.1038/s41565-019-0533-8
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
One of the main challenges to upscale the fabrication of molecular devices is to achieve a mechanically stable device with reproducible and controllable electronic features that operates at room temperature(1,2). This is crucial because structural and electronic fluctuations can lead to significant changes in the transport characteristics at the electrode-molecule interface(3,4). In this study, we report on the realization of a mechanically and electronically robust graphene-based molecular junction. Robustness was achieved by separating the requirements for mechanical and electronic stability at the molecular level. Mechanical stability was obtained by anchoring molecules directly to the substrate, rather than to graphene electrodes, using a silanization reaction. Electronic stability was achieved by adjusting the pi-pi orbitals overlap of the conjugated head groups between neighbouring molecules. The molecular devices exhibited stable current-voltage (I-V) characteristics up to bias voltages of 2.0 V with reproducible transport features in the temperature range from 20 to 300 K.
引用
收藏
页码:957 / +
页数:6
相关论文
共 30 条
[11]   Covalently bonded single-molecule junctions with stable and reversible photoswitched conductivity [J].
Jia, Chuancheng ;
Migliore, Agostino ;
Xin, Na ;
Huang, Shaoyun ;
Wang, Jinying ;
Yang, Qi ;
Wang, Shuopei ;
Chen, Hongliang ;
Wang, Duoming ;
Feng, Boyong ;
Liu, Zhirong ;
Zhang, Guangyu ;
Qu, Da-Hui ;
Tian, He ;
Ratner, Mark A. ;
Xu, H. Q. ;
Nitzan, Abraham ;
Guo, Xuefeng .
SCIENCE, 2016, 352 (6292) :1443-1445
[12]   Controlling charge transport mechanisms in molecular junctions: Distilling thermally induced hopping from coherent-resonant conduction [J].
Kim, Hyehwang ;
Segal, Dvira .
JOURNAL OF CHEMICAL PHYSICS, 2017, 146 (16)
[13]   Effect of water on silanization of silica by trimethoxysilanes [J].
Krasnoslobodtsev, AV ;
Smirnov, SN .
LANGMUIR, 2002, 18 (08) :3181-3184
[14]   Redox-Dependent Franck-Condon Blockade and Avalanche Transport in a Graphene-Fullerene Single-Molecule Transistor [J].
Lau, Chit Siong ;
Sadeghi, Hatef ;
Rogers, Gregory ;
Sangtarash, Sara ;
Dallas, Panagiotis ;
Porfyrakis, Kyriakos ;
Warner, Jamie ;
Lambert, Colin J. ;
Briggs, G. Andrew D. ;
Mol, Jan A. .
NANO LETTERS, 2016, 16 (01) :170-176
[15]   The evolving quality of frictional contact with graphene [J].
Li, Suzhi ;
Li, Qunyang ;
Carpick, Robert W. ;
Gumbsch, Peter ;
Liu, Xin Z. ;
Ding, Xiangdong ;
Sun, Jun ;
Li, Ju .
NATURE, 2016, 539 (7630) :541-+
[16]   Graphene-porphyrin single-molecule transistors [J].
Mol, Jan A. ;
Lau, Chit Siong ;
Lewis, Wilfred J. M. ;
Sadeghi, Hatef ;
Roche, Cecile ;
Cnossen, Arjen ;
Warner, Jamie H. ;
Lambert, Colin J. ;
Anderson, Harry L. ;
Briggs, G. Andrew D. .
NANOSCALE, 2015, 7 (31) :13181-13185
[17]   High-yield fabrication of nm-size gaps in monolayer CVD graphene [J].
Nef, Cornelia ;
Posa, Laszlo ;
Makk, Peter ;
Fu, Wangyang ;
Halbritter, Andras ;
Schoenenberger, Christian ;
Calame, Michel .
NANOSCALE, 2014, 6 (13) :7249-7254
[18]   Multiple Physical Time Scales and Dead Time Rule in Few-Nanometers Sized Graphene-SiO&ITx&IT-Graphene Memristors [J].
Posa, Laszlo ;
El Abbassi, Maria ;
Makk, Peter ;
Santa, Botond ;
Nef, Cornelia ;
Csontos, Miklos ;
Calame, Michel ;
Halbritter, Andras .
NANO LETTERS, 2017, 17 (11) :6783-6789
[19]   Room-Temperature Gating of Molecular Junctions Using Few-Layer Graphene Nanogap Electrodes [J].
Prins, Ferry ;
Barreiro, Amelia ;
Ruitenberg, Justus W. ;
Seldenthuis, Johannes S. ;
Aliaga-Alcalde, Nuria ;
Vandersypen, Lieven M. K. ;
van der Zant, Herre S. J. .
NANO LETTERS, 2011, 11 (11) :4607-4611
[20]   Robust Molecular Anchoring to Graphene Electrodes [J].
Sadeghi, Hatef ;
Sangtarash, Sara ;
Lambert, Cohn .
NANO LETTERS, 2017, 17 (08) :4611-4618