High efficiency LDMOS current mode class-d power amplifier at 1 GHz

被引：0
|
作者：
Nemati, Hossein Mashad [1 ]
Fager, Christian [1 ]
Zirath, Herbert [1 ]
机构：
[1] Chalmers, Dept Microtechnol & Nanosci MC2, Microwave Elect Lab, Trondheim, Norway
来源：
2006 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-4 | 2006年
关键词：
switching mode power amplifiers; current mode class-D; LDMOS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high power, high efficiency current mode class-D (CMCD) power amplifier (PA) is designed, implemented, and characterized based on LDMOS transistors. A drain efficiency of 71% was achieved with an output power of 20.3 W and a gain of 15.1 dB at 1 GHz. To our knowledge, this result represents the highest efficiency for the CMCD PAs based on LDMOS and the highest gain for all switching mode PAs that have been reported for high power applications (output power of more than 7 W), at frequencies above 800 MHz. Moreover, a wide-band lumped-component balun has been used for the CMCD PA which enables significant size reduction of this class of PA for I-band applications.
引用
收藏
页码：664 / +
页数：2
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