High temperature characterization of GaN-based photodetectors

被引：36

作者：

De Vittorio, M ^{[1
]}

Potì, B

Todaro, MT

Frassanito, MC

Pomarico, A

Passaseo, A

Lomascolo, M

Cingolani, R

机构：

[1] Univ Lecce, Natl Nanotechnol Lab, INFM, Dipartimento Ingn Innovaz, I-73100 Lecce, Italy

[2] CNR, IMM, Ist Microelecttron & Microsistemi, Sez Lecce, I-73100 Lecce, Italy

[3] ISUFI, Nanosci Dept, I-73100 Lecce, Italy

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2004年 / 113卷 / 03期

关键词：

UV detectors; GaN; high temperature; persistent photocurrent;

D O I：

10.1016/j.sna.2004.04.016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we report on the high temperature characterization of two different interdigitated metal-semiconductor-metal (MSM) GaN-based photodetectors. The active material of the two MSM devices consists of bulk GaN grown by metal organic chemical vapor deposition (MOCVD), and of an AlGaN/GaN heterostructure grown by molecular beam epitaxy/magnetron sputtering epitaxy (MBE/MSE) system. Some of the trapping mechanisms which are at the origin of the persistent photocurrent (PPC) effects in GaN-based devices have been studied. The analysis of the decay time as a function of the temperature shows that in both devices the GaN excitonic resonances provide the most important contribution to the PPC on the millisecond time scale at low temperature. The densities of the trap centers involved in the PPC were obtained in both samples by measuring the photocurrent as a function of optical power sweeped in the upward and downward direction. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：329 / 333

页数：5

共 18 条

[1] Origin of persistent photocurrent in GaN/AlGaN multiquantum wells [J].

Bonfiglio, A ;

Traetta, G ;

Lomascolo, M ;

Passaseo, A ;

Cingolani, R .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (10) :5782-5784

[2] Persistent photoconductivity in n-type GaN [J].

Chen, HM ;

Chen, YF ;

Lee, MC ;

Feng, MS .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (02) :899-901

[3] Schottky barrier detectors on GaN for visible-blind ultraviolet detection [J].

Chen, Q ;

Yang, JW ;

Osinsky, A ;

Gangopadhyay, S ;

Lim, B ;

Anwar, MZ ;

Khan, MA ;

Kuksenkov, D ;

Temkin, H .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2277-2279

[4] Strain effects in GaN epilayers [J].

Gil, B ;

Lefebvre, P ;

Morkoç, H .

COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE IV PHYSIQUE ASTROPHYSIQUE, 2000, 1 (01) :51-60

[5] OPTICALLY DETECTED MAGNETIC-RESONANCE OF GAN FILMS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION [J].

GLASER, ER ;

KENNEDY, TA ;

DOVERSPIKE, K ;

ROWLAND, LB ;

GASKILL, DK ;

FREITAS, JA ;

KHAN, MA ;

OLSON, DT ;

KUZNIA, JN ;

WICKENDEN, DK .

PHYSICAL REVIEW B, 1995, 51 (19) :13326-13336

[6] Improvement of metal-semiconductor-metal GaN photoconductors [J].

Huang, ZC ;

Mott, DB ;

Shu, PK ;

Chen, JC ;

Wickenden, DK .

JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (03) :330-333

[7] Kinetics of photoconductivity in n-type GaN photodetector [J].

Kung, P ;

Zhang, X ;

Walker, D ;

Saxler, A ;

Piotrowski, J ;

Rogalski, A ;

Razeghi, M .

APPLIED PHYSICS LETTERS, 1995, 67 (25) :3792-3794

[8] Nature of Mg impurities in GaN [J].

Li, JZ ;

Lin, JY ;

Jiang, HX ;

Salvador, A ;

Botchkarev, A ;

Morkoc, H .

APPLIED PHYSICS LETTERS, 1996, 69 (10) :1474-1476

[9] FUNDAMENTAL ENERGY-GAP OF GAN FROM PHOTOLUMINESCENCE EXCITATION-SPECTRA [J].

MONEMAR, B .

PHYSICAL REVIEW B, 1974, 10 (02) :676-681

[10] AlxGa1-xN:Si Schottky barrier photodiodes with fast response and high detectivity [J].

Monroy, E ;

Calle, F ;

Munoz, E ;

Omnes, F ;

Gibart, P ;

Munoz, JA .

APPLIED PHYSICS LETTERS, 1998, 73 (15) :2146-2148

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