Vapor phase deposition technology for inorganic and organic devices

(MO)CVD have proven to be the most preferred technology for the fabrications of layers and structures of complex material systems. Since more than 2 decades; this technology is employed as key technology for the development, research and manufacturing of compound semiconductors for optical and high speed electrical devices like HB-LEDs, Laser, HBTs, HEMT etc. The main reason is that the flexibility and productivity with this deposition technology is unrivaled today. Similarly, low manufacturing costs for blue and green high brightness LEDs using the high temperatures process (up to 1200degreesC) for Nitrides are achieved with the introduction of an MOCVD technology with a capacity of up to 24 x 2". But the technological limit of the MOCVD technology in terms of temperature, capacity and application is still not reached today. As example, MOCVD is today used for the large scale deposition technology for SiC materials on 7 x 2" wafers at 1600degreesC. But tools for 4" will be required soon. Also MOCVD is expected to be the technology of choice in the Silicon industry for the next generation of devices like memories using highK dielectrics and ferroelectrics: And why not for the deposition of organic materials for electrical and optical device application?