Divacancies in proton irradiated silicon: Comparison of annealing mechanisms studied with infrared spectroscopy and positron annihilation

被引：22
作者：
Poirier, R
Avalos, V
Dannefaer, S
Schiettekatte, F
Roorda, S
机构：
[1] Univ Montreal, Dept Phys, Grp Rech Phys & Technol Couches Minces, Montreal, PQ H3C 3J7, Canada
[2] Univ Winnipeg, Dept Phys, Winnipeg, MB R3B 2E9, Canada
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2003年 / 206卷
关键词：
silicon; defects; divacancy; ion implantation; infrared absorption; positron annihilation;
D O I：
10.1016/S0168-583X(03)00686-4
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Defects produced in 8 MeV proton irradiated silicon were studied using Fourier transform infrared spectroscopy (FTIR) and positron annihilation measurements (PAS). Isothermal annealing of the divacancy absorption band monitored using FTIR, has been compared with PAS on similar samples. The two methods agree perfectly during isothermal annealing at 150 degreesC, but at 250 degreesC the 1.8 mum absorption band disappears after annealing for 60 min, whereas positron lifetime and trapping rate remain constant, and annealing to 500 degreesC is required to remove the divacancy response. Since divacancies are not mobile at 150 degreesC their annealing can be ascribed to recombination with mobile interstitials. The discrepancy observed during annealing at 250 degreesC is suggested to be a consequence of some sort of divacancy agglomeration. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：85 / 89
页数：5
相关论文
共 11 条
[1]  
CARTONMERLET F, 1978, J PHYS LETT-PARIS, V39, pL113
[2]   EFFECT OF POLARIZED LIGHT ON 1.8-MU, 3.3-MU, AND 3.9-MU RADIATION-INDUCED ABSORPTION BANDS IN SILICON [J].
CHENG, LJ ;
VAJDA, P .
PHYSICAL REVIEW, 1969, 186 (03) :816-&
[3]   1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J].
CHENG, LJ ;
CORELLI, JC ;
CORBETT, JW ;
WATKINS, GD .
PHYSICAL REVIEW, 1966, 152 (02) :761-+
[4]   CHARACTERISTICS OF NEUTRON DAMAGE IN SILICON [J].
CHENG, LJ ;
LORI, J .
PHYSICAL REVIEW, 1968, 171 (03) :856-+
[5]  
Krause-Rehberg R., 1999, Positron annihilation in semiconductors. Defect studies
[6]  
PELLEGRINO P, 2001, PHYS REV B, V64
[7]   Divacancies in proton irradiated silicon: characterization and annealing mechanisms [J].
Poirier, R ;
Roorda, S ;
Schiettekatte, F ;
Lalancette, M ;
Zikovsky, J .
PHYSICA B-CONDENSED MATTER, 2001, 308 :462-464
[8]   Defects in electron-irradiated Si studied by positron-lifetime spectroscopy [J].
Polity, A ;
Borner, F ;
Huth, S ;
Eichler, S ;
Krause-Rehberg, R .
PHYSICAL REVIEW B, 1998, 58 (16) :10363-10377
[9]  
Stein H. J., 1970, Radiation Effects, V6, P19, DOI 10.1080/00337577008235041
[10]   INFRARED-ABSORPTION STUDIES OF THE DIVACANCY IN SILICON - NEW PROPERTIES OF THE SINGLY NEGATIVE CHARGE STATE [J].
SVENSSON, JH ;
SVENSSON, BG ;
MONEMAR, B .
PHYSICAL REVIEW B, 1988, 38 (06) :4192-4197
12