Understanding photophysical properties of iridium complexes with N-(5-phenyl-1,3,4-oxadiazol-2-yl)-diphenylphosphinic amide as the ancillary ligand

被引:0
作者
Si, Yanling [1 ]
Wu, Qinchao [1 ]
Liu, Yumeng [1 ]
Yang, Guochun [2 ]
机构
[1] Jilin Agr Univ, Coll Resource & Environm Sci, Changchun 130118, Jilin, Peoples R China
[2] Northeast Normal Univ, Minist Educ, Key Lab UV Light Emitting Mat & Technol, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Jilin, Peoples R China
基金
中国国家自然科学基金;
关键词
DENSITY-FUNCTIONAL THEORY; THERMOCHEMICAL KINETICS; EXCITATION-ENERGIES; EFFICIENT; RED; ELECTROLUMINESCENCE; HOST; PERFORMANCE; PHOSPHORS; DENDRONS;
D O I
10.1039/c9nj03090e
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Understanding the physical nature behind experimental phenomena is rather significant to further optimize the performance of a material. Now, density functional theory (DFT) has become a well-accepted tool for unveiling the origin of physical/chemical properties of materials and designing new materials with desirable properties. Recently, two novel POXD-based (N-(5-phenyl-1,3,4-oxadiazol-2-yl)-diphenylphosphinic amide) iridium(iii) complexes 1 and 4 with different cyclometalated ligands showed significant performance differences. Herein, we employ DFT calculations to investigate the electronic structures, absorption and emission spectra, and charge transportation properties of iridium(iii) complexes 1 and 4. In comparison with 4, the good performance of 1 can be attributed to its favorable charge transport properties. Based on complex 1, two new iridium complexes (2 and 3) were theoretically designed by substituting phenyl rings with a tert-butyl group (-t-Bu) and methyl group (-CH3), respectively. The results clearly indicated that the -t-Bu and -CH3 groups enhance the hole and electron injection abilities and improve the charge balance. On the other hand, the designed complexes 2 and 3 also show a blue-shift in emission spectra with respect to complex 1. As a result, complexes 2 and 3 are expected to be promising phosphorescence emitters with good device performance.
引用
收藏
页码:16975 / 16980
页数:6
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