Electric field effect in multilayer Cr2Ge2Te6: a ferromagnetic 2D material

被引:183
作者
Xing, Wenyu [1 ,2 ]
Chen, Yangyang [1 ,2 ]
Odenthal, Patrick M. [3 ]
Zhang, Xiao [1 ,2 ]
Yuan, Wei [1 ,2 ]
Su, Tang [1 ,2 ]
Song, Qi [1 ,2 ]
Wang, Tianyu [1 ,2 ]
Zhong, Jiangnan [1 ,2 ]
Jia, Shuang [1 ,2 ]
Xie, X. C. [1 ,2 ]
Li, Yan [3 ]
Han, Wei [1 ,2 ]
机构
[1] Peking Univ, Sch Phys, Int Ctr Quantum Mat, Beijing 100871, Peoples R China
[2] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
[3] Univ Utah, Dept Phys & Astron, Salt Lake City, UT 84112 USA
基金
中国国家自然科学基金;
关键词
ferromagnetism; electric field tuning; spintronics; magnetic optical Kerr effect; 2-DIMENSIONAL MATERIALS; GRAPHENE; HETEROSTRUCTURE; EXFOLIATION; PROGRESS;
D O I
10.1088/2053-1583/aa7034
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The emergence of two-dimensional (2D) materials has attracted a great deal of attention due to their fascinating physical properties and potential applications for future nano-electronic devices. Since the first isolation of graphene, a Dirac material, a large family of new functional 2D materials have been discovered and characterized, including insulating 2D boron nitride, semiconducting 2D transition metal dichalcogenides and black phosphorus, and superconducting 2D bismuth strontium calcium copper oxide, molybdenum disulphide and niobium selenide, etc. Here, we report the identification of ferromagnetic thin flakes of Cr2Ge2Te6 (CGT) with thickness down to a few nanometers, which provides a very important piece to the van der Waals structures consisting of various 2D materials. We further demonstrate the giant modulation of the channel resistance of 2D CGT devices via electric field effect. Our results illustrate the gate voltage tunability of 2D CGT and the potential of CGT, a ferromagnetic 2D material, as a new functional quantum material for applications in future nanoelectronics and spintronics.
引用
收藏
页数:7
相关论文
共 42 条
[1]  
[Anonymous], 2017, ARXIV170305753
[2]   Recent Advances in Two-Dimensional Materials beyond Graphene [J].
Bhimanapati, Ganesh R. ;
Lin, Zhong ;
Meunier, Vincent ;
Jung, Yeonwoong ;
Cha, Judy ;
Das, Saptarshi ;
Xiao, Di ;
Son, Youngwoo ;
Strano, Michael S. ;
Cooper, Valentino R. ;
Liang, Liangbo ;
Louie, Steven G. ;
Ringe, Emilie ;
Zhou, Wu ;
Kim, Steve S. ;
Naik, Rajesh R. ;
Sumpter, Bobby G. ;
Terrones, Humberto ;
Xia, Fengnian ;
Wang, Yeliang ;
Zhu, Jun ;
Akinwande, Deji ;
Alem, Nasim ;
Schuller, Jon A. ;
Schaak, Raymond E. ;
Terrones, Mauricio ;
Robinson, Joshua A. .
ACS NANO, 2015, 9 (12) :11509-11539
[3]   Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene [J].
Butler, Sheneve Z. ;
Hollen, Shawna M. ;
Cao, Linyou ;
Cui, Yi ;
Gupta, Jay A. ;
Gutierrez, Humberto R. ;
Heinz, Tony F. ;
Hong, Seung Sae ;
Huang, Jiaxing ;
Ismach, Ariel F. ;
Johnston-Halperin, Ezekiel ;
Kuno, Masaru ;
Plashnitsa, Vladimir V. ;
Robinson, Richard D. ;
Ruoff, Rodney S. ;
Salahuddin, Sayeef ;
Shan, Jie ;
Shi, Li ;
Spencer, Michael G. ;
Terrones, Mauricio ;
Windl, Wolfgang ;
Goldberger, Joshua E. .
ACS NANO, 2013, 7 (04) :2898-2926
[4]   Strong spin-lattice coupling in CrSiTe3 [J].
Casto, L. D. ;
Clune, A. J. ;
Yokosuk, M. O. ;
Musfeldt, J. L. ;
Williams, T. J. ;
Zhuang, H. L. ;
Lin, M. -W. ;
Xiao, K. ;
Hennig, R. G. ;
Sales, B. C. ;
Yan, J. -Q. ;
Mandrus, D. .
APL MATERIALS, 2015, 3 (04)
[5]   The electronic properties of graphene [J].
Castro Neto, A. H. ;
Guinea, F. ;
Peres, N. M. R. ;
Novoselov, K. S. ;
Geim, A. K. .
REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162
[6]   High-quality sandwiched black phosphorus heterostructure and its quantum oscillations [J].
Chen, Xiaolong ;
Wu, Yingying ;
Wu, Zefei ;
Han, Yu ;
Xu, Shuigang ;
Wang, Lin ;
Ye, Weiguang ;
Han, Tianyi ;
He, Yuheng ;
Cai, Yuan ;
Wang, Ning .
NATURE COMMUNICATIONS, 2015, 6
[7]  
Cui X, 2015, NAT NANOTECHNOL, V10, P534, DOI [10.1038/nnano.2015.70, 10.1038/NNANO.2015.70]
[8]   Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids [J].
Das, Saptarshi ;
Robinson, Joshua A. ;
Dubey, Madan ;
Terrones, Humberto ;
Terrones, Mauricio .
ANNUAL REVIEW OF MATERIALS RESEARCH, VOL 45, 2015, 45 :1-27
[9]   Electronic transport in two-dimensional graphene [J].
Das Sarma, S. ;
Adam, Shaffique ;
Hwang, E. H. ;
Rossi, Enrico .
REVIEWS OF MODERN PHYSICS, 2011, 83 (02) :407-470
[10]   Boron nitride substrates for high-quality graphene electronics [J].
Dean, C. R. ;
Young, A. F. ;
Meric, I. ;
Lee, C. ;
Wang, L. ;
Sorgenfrei, S. ;
Watanabe, K. ;
Taniguchi, T. ;
Kim, P. ;
Shepard, K. L. ;
Hone, J. .
NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726