Dual wavelength single waveguide laser diode fabricated using selective area quantum well intermixing

被引：6
作者：
Tabbakh, Thamer [1 ]
LiKamWa, Patrick [1 ]
机构：
[1] Univ Cent Florida, Dept Elect & Comp Engn, CREOL, Coll Opt & Photon, Orlando, FL 32816 USA
来源：
OPTIK | 2017年 / 140卷
关键词：
Dual wavelength; Laser diode; Quantum well intermixing; Fabrication; OHMIC CONTACTS; GAAS;
D O I：
10.1016/j.ijleo.2017.04.092
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A two-section single stripe laser diode has been fabricated from a strained InGaAs/GaAs single quantum well heterostructure grown on GaAs substrate. The two sections have different band gap energies owing to selective area intermixing that is achieved by rapid thermal annealing of the sample with the two sections capped by silicon oxynitride (SiOxNy) and silicon dioxide (SiO2), respectively. The device is capable of producing laser emission at either 911 or 953 nm wavelengths depending on the current applied to either section of the laser stripe. (C) 2017 Elsevier GmbH. All rights reserved.
引用
收藏
页码：592 / 596
页数：5
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