Effect of capping layer on the spin accumulation and magnetoresistance of a current-perpendicular-to-plane spin valve

被引：9

作者：

Kumar, S. Bala ^{[1
]}

Tan, S. G.

Jalil, M. B. A.

机构：

[1] Natl Univ Singapore, Data Storage Inst, DSI Bldg,5 Engn Dr 1, Singapore 117608, Singapore

[2] Natl Univ Singapore, Informat Storage Mat Lab, Dept Elect & Comp Engn, Singapore 117576, Singapore

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 16期

关键词：

D O I：

10.1063/1.2722677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors present a theoretical analysis of spin accumulation and magnetoresistance (MR) of a current-perpendicular-to-plane multilayer device with an additional nonmagnetic capping layer (NCL). They found that increased spin relaxation within the NCL may result in either an increase or a decrease of spin accumulation within the free ferromagnetic layer, depending on the fixed layer thickness. This raises the possibility of using spin relaxation in the NCL as a means of optimizing the current-induced magnetization switching effect. Additionally, the authors found that although the overall MR is decreased by the addition of the NCL, this decrease may be mitigated by strong spin relaxation within the capping layer. (C) 2007 American Institute of Physics.

引用

页数：3

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