Electronic structures of Bi4Ti3O12 thin film and single crystal determined by resonant soft-x-ray emission spectroscopy

被引：10
作者：
Higuchi, T [1 ]
Kudoh, K
Takeuchi, T
Masuda, Y
Harada, Y
Shin, S
Tsukamoto, T
机构：
[1] Sci Univ Tokyo, Dept Appl Phys, Tokyo 1628601, Japan
[2] Hachinohe Inst Technol, Dept Elect Engn, Hachinohe 0318501, Japan
[3] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 11B期
关键词：
Bi4Ti3O12 (BIT); soft-X-ray emission spectroscopy (SXES); thin film; single crystal; Ti-O hybridization effect; electronic structure;
D O I：
10.1143/JJAP.41.7195
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Soft-X-ray emission spectroscopy (SXES) spectra were measured for ferroelectric Bi4Ti3O12 (BIT) single crystal and highly c-axis oriented BIT thin film. In both BIT single crystal and thin film, the Ti 3d and O 2p partial density of states (PDOS) in the valence band region were observed in O 1s and Ti 2p SXES spectra. The energy position of the Ti 3d state overlapped with that of the O 2p state,. indicating the occurrence of the hybridization effect between the Ti 3d and O 2p states. The Ti 3d PDOS decreases in BIT thin film. This fact indicates that the hybridization effect of BIT thin film is smaller than that of BIT single crystal.
引用
收藏
页码：7195 / 7197
页数：3
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