Stranski-Krastanov growth of (Si)Ge/Si(001): transmission electron microscopy compared with segregation theory

被引：4

作者：

Norris, D. J. ^{[1
]}

Walther, T. ^{[1
]}

机构：

[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield, S Yorkshire, England

来源：

MATERIALS SCIENCE AND TECHNOLOGY | 2018年 / 34卷 / 13期

基金：

英国工程与自然科学研究理事会;

关键词：

Stranski-Krastanov; islanding; SiGe; TEM; segregation; three-state exchange model; WETTING LAYER THICKNESSES; SURFACE SEGREGATION; GE SEGREGATION; GRAIN-BOUNDARIES; LOW-TEMPERATURE; PLANAR DEFECTS; SIGE LAYERS; SUBMONOLAYER; ISLANDS; INSTABILITY;

D O I：

10.1080/02670836.2018.1455013

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We performed transmission electron microscopy of SiGe/Si(001) and Ge/Si(001) samples that undergo the Stranski-Krastanov transition from flat layer to island growth. With the help of quantitative X-ray maps of those layers, we have determined the total amount of deposited germanium at which islanding commences. The maximum amount of Ge buried in a flat layer amounts to 2.3 monolayers. We show by modelling that it is the strain due to the total amount of Ge atoms deposited that drives the islanding process. At 600 degrees C [400 degrees C], 1.62 [1.74] monolayers of Ge are expected from simulations to segregate towards the surface, the strain of which is sufficient to trigger plastic relaxation by islanding, in agreement with our electron microscope observations.

引用

页码：1539 / 1548

页数：10

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