200 eV 10 keV boron implantation and rapid thermal annealing: Secondary ion mass spectroscopy and transmission electron microscopy study

被引：17

作者：

Current, MI ^{[1
]}

Lopes, D

Foad, MA

England, JG

Jones, C

Su, D

机构：

[1] Appl Mat Inc, Santa Clara, CA 95054 USA

[2] Appl Mat Inc, Horsham, W Sussex, England

[3] Philips Mat Anal Grp, Sunnyvale, CA USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 01期

关键词：

D O I：

10.1116/1.589805

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Atomic profiles (secondary ion mass spectroscopy) and cross-section transmission electron microscopy (TEM) images of selectively etched, annealed profiles were studied for boron energies from 200 eV to 10 keV and rapid thermal processing anneals at 900, 975, and 1050 degrees C. Consistent variations of dopant depth were obtained over this process range. TEM images showed evidence of lateral dopant variation near the edges of poly-Si gate structures, perhaps an effect of lateral straggling and reflection of ions from the polymask. (C) 1998 American Vacuum Society.

引用

收藏

页码：327 / 333

页数：7

相关论文

共 50 条

[31] TRANSMISSION ELECTRON-MICROSCOPY STUDY OF DAMAGE BY ION-IMPLANTATION IN GOLD - EVIDENCE FOR A SPIKE THRESHOLD [J].

RUAULT, MO ;

BERNAS, H ;

CHAUMONT, J .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1979, 39 (06) :757-783

[32] Boron depth profiles and residual damage following rapid thermal annealing of low-temperature BSi molecular ion implantation in silicon [J].

Liang, J. H. ;

Wang, S. C. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 261 (1-2) :651-655

[33] SUPPRESSION OF INSULATOR CHARGING DURING SECONDARY-ION MASS-SPECTROSCOPY AND SCANNING ELECTRON-MICROSCOPY [J].

GIRALDEZ, E ;

DOLHERT, L ;

KINGERY, WD ;

PETUSKEY, WT .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1985, 68 (10) :C286-C287

[34] Study on the interfaces of Cu/PA-N and PA-N/Si by secondary ion mass spectroscopy and scanning electron microscopy [J].

Yang, GR ;

Mathur, D ;

McDonald, JF ;

Lu, TM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (06) :3169-3173

[35] Scanning electron microscopy (SEM), transmission electron microscope (TEM) and secondary ion mass spectroscopy (SIMS) characterization of the morphology of aluminum bond pads for surface reflectivity applications. [J].

Schade, M ;

Ai, R ;

Stein, Y ;

Anderson, T .

DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS PROCESSING II, 1996, 406 :425-430

[36] ANNEALING BEHAVIOR OF DYSPROSIUM ION-IMPLANTED NICKEL - COMBINED STUDY USING RUTHERFORD BACKSCATTERING, TRANSMISSION ELECTRON-MICROSCOPY, AND TOTAL CURRENT SPECTROSCOPY [J].

CHADDERTON, LT ;

JOHNSON, E ;

KOMOLOV, SA .

NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3) :639-645

[37] RUTHERFORD BACKSCATTERING AND TRANSMISSION ELECTRON-MICROSCOPY STUDY ON PHASE-TRANSFORMATION OF AS HEAVILY DOPED SI DURING POST-RAPID-THERMAL ANNEALING [J].

LU, ZH .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) :1756-1760

[38] Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing -: art. no. 013108 [J].

Markwitz, A ;

Johnson, S ;

Rudolphi, M ;

Baumann, H ;

Mücklich, A .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :013108-1

[39] Growth of SiC nanostructures on si (100) using low energy carbon ion implantation and electron beam rapid thermal annealing [J].

Markwitz, A. ;

Johnson, S. ;

Rudolphi, M. ;

Baumann, H. .

INTERNATIONAL JOURNAL OF NANOSCIENCE, VOL 3, NOS 4 AND 5, 2004, 3 (4-5) :425-430

[40] EARLY STAGES IN THIN-FILM METAL SILICON AND METAL-SIO-2 REACTIONS UNDER RAPID THERMAL ANNEALING CONDITIONS - THE RAPID THERMAL ANNEALING TRANSMISSION ELECTRON-MICROSCOPY TECHNIQUE [J].

NATAN, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06) :1404-1408

← 1 2 3 4 5 →