Photoluminescence characteristics of high quality ZnO nanowires and its enhancement by polymer covering

被引：142

作者：

Liu, K. W. ^{[1
]}

Chen, R. ^{[1
]}

Xing, G. Z. ^{[1
]}

Wu, T. ^{[1
]}

Sun, H. D. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 02期

关键词：

band structure; electron-hole recombination; excitons; II-VI semiconductors; nanowires; photoluminescence; polymers; surface states; wide band gap semiconductors; zinc compounds; OPTICAL-PROPERTIES; SAPPHIRE; FILMS;

D O I：

10.1063/1.3291106

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the photoluminescence (PL) properties of ZnO nanowires with and without covering with polymethyl methacrylate (PMMA). Low temperature PL spectra of as-grown ZnO nanowires are dominated by near band edge (NBE) emission due to donor bound excitons and free-to-bound recombination (FB). FB emission persists till 300 K and together with free exciton emission governs the lineshape of the PL spectra. After covering with PMMA, the integral intensity of NBE emission increases about three times, indicating significantly improved excitonic emission efficiency. A model based on surface states and energy bands theory was proposed to interpret this emission enhancement.

引用

页数：3

共 28 条

[1] Enhanced exciton-phonon interactions in photoluminescence of ZnO nanopencils [J].

Ahn, Cheol Hyoun ;

Mohanta, Sanjay Kumar ;

Lee, Nae Eung ;

Cho, Hyung Koun .

APPLIED PHYSICS LETTERS, 2009, 94 (26)

[2] Tailoring the photoluminescence of ZnO nanowires using Au nanoparticles [J].

Chen, T. ;

Xing, G. Z. ;

Zhang, Z. ;

Chen, H. Y. ;

Wu, T. .

NANOTECHNOLOGY, 2008, 19 (43)

[3] Surface-state related luminescence in ZnO nanocrystals [J].

Fallert, Johannes ;

Hauschild, Robert ;

Stelzl, Felix ;

Urban, Alex ;

Wissinger, Markus ;

Zhou, Huijuan ;

Klingshirn, Claus ;

Kalt, Heinz .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (07)

[4] Temperature dependent photoluminescence from ZnO nanowires and nanosheets on brass substrate [J].

Gu, Xiuquan ;

Huo, Kaifu ;

Qian, Guixiang ;

Fu, Jijiang ;

Chu, Paul K. .

APPLIED PHYSICS LETTERS, 2008, 93 (20)

[5] ZnO-based transparent thin-film transistors [J].

Hoffman, RL ;

Norris, BJ ;

Wager, JF .

APPLIED PHYSICS LETTERS, 2003, 82 (05) :733-735

[6] Room-temperature ultraviolet nanowire nanolasers [J].

Huang, MH ;

Mao, S ;

Feick, H ;

Yan, HQ ;

Wu, YY ;

Kind, H ;

Weber, E ;

Russo, R ;

Yang, PD .

SCIENCE, 2001, 292 (5523) :1897-1899

[7]

Huang MH, 2001, ADV MATER, V13, P113, DOI 10.1002/1521-4095(200101)13:2<113::AID-ADMA113>3.0.CO

[8]

2-H

[9] High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition [J].

Kaidashev, EM ;

Lorenz, M ;

von Wenckstern, H ;

Rahm, A ;

Semmelhack, HC ;

Han, KH ;

Benndorf, G ;

Bundesmann, C ;

Hochmuth, H ;

Grundmann, M .

APPLIED PHYSICS LETTERS, 2003, 82 (22) :3901-3903

[10]

Klingshirn C.F., 2006, SEMICONDUCTOR OPTICS

← 1 2 3 →