All-epitaxial mode-confined vertical-cavity surface-emitting laser

被引：10

作者：

Lu, D ^{[1
]}

Ahn, J ^{[1
]}

Huang, H ^{[1
]}

Deppe, DG ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Ctr Microelect Res, Austin, TX 78712 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 12期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1795982

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A type of AlGaAs/GaAs-based vertical-cavity surface-emitting laser is demonstrated that creates a strongly-confined optical mode in an all-epitaxial heterostructure. The mode-confining region in this monolithic device is due to a lithographically defined intracavity phase-shifting layer. Analysis shows that the optical loss in the device can be less than for oxide-confinement. (C) 2004 American Institute of Physics.

引用

页码：2169 / 2171

页数：3

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