Magnetron sputter deposition of (SiC)1-x(AlN)x solid solution films

被引：4

作者：

Guseinov, MK ^{[1
]}

Kurbanov, MK ^{[1
]}

Safaraliev, GK ^{[1
]}

Bilalov, BA ^{[1
]}

机构：

[1] Dagestan State Univ, Makhachkala, Dagestan, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2005年 / 31卷 / 02期

关键词：

Silicon; Carbide; Crystal Structure; Solid Solution; Optical Absorption;

D O I：

10.1134/1.1877627

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetron sputtering of polycrystalline SiC-AlN targets was used to obtain films of (SiC)(1 - x)(AlN)(x) solid solutions on silicon carbide (6H-SiC) substrates heated to a temperature in the range T = 500-1200degreesC. The deposits were characterized with respect to structure, composition, and optical absorption. It is demonstrated that the films obtained on 6H-SiC substrates at T greater than or equal to 1000degreesC possess a single crystal structure. The compositions of (SiC)(1 - x)(AlN)(x) films are close to those of the corresponding SiC-AlN targets. (C) 2005 Pleiades Publishing, Inc.

引用

页码：138 / 139

页数：2

共 5 条

[1]

Dmitriev V. A., 1991, Soviet Technical Physics Letters, V17, P214

[2] Investigation of the SiC/(SiC)1-x(AlN)x heterostructures by the method of capacitance-voltage characteristics [J].