Oxidation and reduction of ultrathin nanocrystalline ru films on silicon: Model system for Ru-capped extreme ultraviolet lithography optics

被引：27
作者：
He, Y. B.
Goriachko, A.
Korte, C.
Farkas, A.
Mellau, G.
Dudin, P.
Gregoratti, L.
Barinov, A.
Kiskinova, M.
Stierle, A.
Kasper, N.
Bajt, S.
Over, H.
机构：
[1] Univ Giessen, Dept Chem Phys, D-35392 Giessen, Germany
[2] Sincrotrone Trieste, I-34012 Trieste, Italy
[3] Max Planck Inst Met Res, D-70569 Stuttgart, Germany
[4] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
来源：
JOURNAL OF PHYSICAL CHEMISTRY C | 2007年 / 111卷 / 29期
关键词：
D O I：
10.1021/jp071339b
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Ultrathin ruthenium films are promising capping layers protecting extreme ultraviolet lithography optics against carbon growth and oxidation. The structure and reactivity of 2, 5, and 7 nm thick nanocrystalline Ru films on Si (serving as a model system for Ru capping layers) were studied by multiple techniques including scanning electron microscopy, X-ray diffraction, X-ray reflectivity, and X-ray photoelectron spectroscopy. The structural analysis indicated dense and flat Ru films, consisting of preferentially (0001)-oriented grains. High resolution core-level Ru 3d(5/2) and O 1s spectroscopy studies have revealed that these Ru films exposed to O-2 ambient are resistant to oxidation up to similar to 470 K similar to the oxidation of single-crystalline Ru(0001) surfaces. The reduction of the oxide in the H-2 ambient is highly effective and proceeds already below 370 K.
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页码：10988 / 10992
页数：5
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