Exciton and Trion Energy Transfer from Giant Semiconductor Nanocrystals to MoS2 Monolayers

被引:35
作者
Sampat, Siddharth [1 ]
Guo, Tianle [1 ]
Zhang, Kehao [2 ]
Robinson, Joshua A. [2 ]
Ghosh, Yagnaseni [3 ]
Acharya, Krishna P. [3 ]
Htoon, Han [3 ]
Hollingsworth, Jennifer A. [3 ]
Gartstein, Yuri N. [1 ]
Malko, Anton V. [1 ]
机构
[1] Univ Texas Dallas, Dept Phys, Richardson, TX 75080 USA
[2] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[3] Los Alamos Natl Lab, Mat Phys & Applicat Ctr Integrated Nanotechnol, POB 1663, Los Alamos, NM 87545 USA
基金
美国国家科学基金会;
关键词
TMDCs; MoS2; giant nanocrystal quantum dots; energy transfer; trions and excitons; QUANTUM DOTS; PHOTOLUMINESCENCE; BLINKING; RECOMBINATION;
D O I
10.1021/acsphotonics.6b00088
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We investigate nonradiative energy transfer (NRET) between CdSe/CdS core/shell "giant" nanocrystal quantum dots (gNQDs) and monolayer domains of molybdenum disulfide (MoS2) grown by chemical vapor deposition. We employ three sets of gNQDs with varied core/shell parameters that exhibit radiative emission from neutral and charged excitons (trions) at different spectral positions from 590 to 660 nm as confirmed by photon statistics of individual nanocrystals. Strong photoluminescence (PL) emission quenching is observed for the donor gNQDs placed on MoS2 domains, indicative of the efficient NRET. Analysis of the double-component PL decays reveals NRET from both neutral excitons and charged trions with the same efficiency. Applying a macroscopic electrodynamics model for the decay of electric-dipole emitters in the vicinity of an ultrathin semiconducting layer with a strong in-plane excitonic polarizability, we confirm high NRET efficiencies from >95% to 85% for dots with diameters from 10 to 20 nm. This demonstration opens new possibilities for studies of energy transfer between zero-dimensional emitters and two-dimensional absorbers, potentially enabling new avenues for multiexciton harvesting and utilization.
引用
收藏
页码:708 / 715
页数:8
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