Recent progress in the development of n-type organic semiconductors for organic field effect transistors

被引:399
作者
Quinn, Jesse T. E. [1 ,2 ]
Zhu, Jiaxin [1 ,2 ]
Li, Xu [3 ]
Wang, Jinliang [3 ]
Li, Yuning [1 ,2 ]
机构
[1] Univ Waterloo, Dept Chem Engn, 200 Univ Ave West, Waterloo, ON N2L 3G1, Canada
[2] Univ Waterloo, Waterloo Inst Nanotechnol, 200 Univ Ave West, Waterloo, ON N2L 3G1, Canada
[3] Henan Acad Sci, Inst Chem, 56 Hongzhuan Rd, Zhengzhou 450002, Henan, Peoples R China
基金
加拿大自然科学与工程研究理事会;
关键词
THIN-FILM TRANSISTORS; POLYMER SOLAR-CELLS; HIGH-ELECTRON-MOBILITY; CHARGE-TRANSPORT PROPERTIES; DONOR-ACCEPTOR POLYMERS; CM(2) V-1 S(-1); HIGH-PERFORMANCE; NAPHTHALENE DIIMIDES; CONJUGATED POLYMERS; SIDE-CHAIN;
D O I
10.1039/c7tc01680h
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This review highlights recent major progress in the development of organic semiconductors as electron transport n-channel materials in organic field effect transistors (OFETs). Three types of materials are discussed: (1) small molecules, (2) polymers, and (3) n-doped small molecules and polymers. Much effort has been made in the modification of known building blocks, development of novel building blocks, and optimization of materials processing and device structures. These efforts have resulted in the achievement of record high electron mobilities for both small molecules (12.6 cm(2) V-1 s(-1)) and polymers (14.9 cm(2) V-1 s(-1)), which are approaching the highest hole mobilities achieved by p-type small molecules and polymers so far. In addition, n-doping of ambipolar and p-type organic semiconductors has proven to be an efficient approach to obtaining a greater number of n-type organic semiconductors. However, it is found that n-type organic semiconductors, in general, still lag behind p-type organic semiconductors in terms of carrier mobility and air stability. Further exploration of new building blocks for making novel materials and optimization of processing conditions and device structures are needed to improve the performance, particularly air stability.
引用
收藏
页码:8654 / 8681
页数:28
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