Effects of vacuum-ultraviolet irradiation on copper penetration into low-k dielectrics under bias-temperature stress

被引：9

作者：

Guo, X. ^{[1
,2
]}

King, S. W. ^{[3
]}

Zheng, H. ^{[1
,2
]}

Xue, P. ^{[1
,2
]}

Nishi, Y. ^{[4
]}

Shohet, J. L. ^{[1
,2
]}

机构：

[1] Univ Wisconsin, Plasma Proc & Technol Lab, Madison, WI 53706 USA

[2] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA

[3] Intel Corp, Log Technol Dev, Hillsboro, OR 97124 USA

[4] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 01期

基金：

美国国家科学基金会;

关键词：

DIFFUSION; MECHANISM;

D O I：

10.1063/1.4905462

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of vacuum-ultraviolet (VUV) irradiation on copper penetration into non-porous low-k dielectrics under bias-temperature stress (BTS) were investigated. By employing x-ray photoelectron spectroscopy depth-profile measurements on both as-deposited and VUV-irradiated SiCOH/Cu stacks, it was found that under the same BTS conditions, the diffusion depth of Cu into the VUV-irradiated SiCOH is higher than that of as-deposited SiCOH. On the other hand, under the same temperature-annealing stress (TS) without electric bias, the Cu distribution profiles in the VUV-irradiated SiCOH were same with that for the as-deposited SiCOH. The experiments suggest that in as-deposited SiCOH, the diffused Cu exists primarily in the atomic state, while in VUV-irradiated SiCOH, the diffused Cu is oxidized by the hydroxyl ions (OH-) generated from VUV irradiation and exists in the ionic state. The mechanisms for metal diffusion and ion injection in VUV irradiated low-k dielectrics are discussed. (C) 2015 AIP Publishing LLC.

引用

页数：5

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