Comparative studies on p-type CuI grown on glass and copper substrate by SILAR method

被引:54
作者
Dhere, Sunetra L. [1 ]
Latthe, Sanjay S. [1 ]
Kappenstein, Charles [2 ]
Mukherjee, S. K. [3 ]
Rao, A. Venkateswara [1 ]
机构
[1] Shivaji Univ, Dept Phys, Air Glass Lab, Kolhapur 416004, Maharashtra, India
[2] Univ Poitiers, Lab Catalysis Organ Chem, CNRS, LA CCO,UMR 6503, F-86000 Poitiers, France
[3] Bhabha Atom Res Ctr, Div Fuel Chem, Bombay 400085, Maharashtra, India
关键词
SILAR; Band gap; Thin film; Hydrophobic; THIN-FILMS; TRANSPARENT; DEPOSITION; HOLE;
D O I
10.1016/j.apsusc.2010.01.058
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Depending upon the method of synthesis and the nature of substrate surface, there is variation in the physico-chemical properties of the material. Cuprous iodide films are deposited at room temperature on the glass and copper substrates by a simple SILAR method and the obtained results are compared. The p-type material with optical band gap 2.88 eV is found to be possessing face-centered cubic crystal structure with lattice parameter 6.134 angstrom. We observed irregular particles for the CuI film on the glass substrate while patterned arrays of micro-rods with cabbage like tips on copper substrate, for the same preparative conditions. Also, the material deposited on copper is showing superhydrophobic nature (contact angle similar to 156 degrees) while that on glass it is hydrophilic (contact angle similar to 88 degrees). We have characterized the thin films by X-ray diffraction, scanning electron microscopy, surface roughness and contact angle measurement, thermoelectric power measurement and optical studies. This hydrophobic, p-type material with wide band gap will be helpful in the development of optoelectronic devices. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:3967 / 3971
页数:5
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