Origin of the frequency branch γ of the de Haas-van Alphen effect in CeSn3

被引:0
|
作者
Maehira, T [1 ]
Higuchi, M
Hasegawa, A
机构
[1] Niigata Univ, Grad Sch Sci & Technol, Niigata 95021, Japan
[2] Tohoku Univ, Dept Phys, Sendai, Miyagi 980, Japan
[3] Niigata Univ, Dept Phys, Niigata 95021, Japan
关键词
band calculation; De Haas van Alphen effect; itinerant electrons; heavy fermions; Fermi surface;
D O I
10.1016/S0304-8853(97)00559-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
CeSn3 is a typical heavy-electron compound which belongs to the valence-fluctuation regime. The major experimental frequency branches of the de Haas-van Alphen effect are explained reasonably well by the large hole sheet and the large electron sheet of the Fermi surface which are derived on the basis of an itinerant 4f-electron model. In particular, it is shown by visualizing the extremal electron orbits that one of the major experimental frequency branches, i.e., the branch gamma, can be explained by those orbits which run through the small hollow on the large electron sheet. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:381 / 382
页数:2
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