Impact of plasma-charging damage polarity on MOSFET noise

被引：4

作者：

Cheung, KP ^{[1
]}

Martin, S ^{[1
]}

Misra, D ^{[1
]}

Steiner, K ^{[1
]}

Colonell, JI ^{[1
]}

Chang, CP ^{[1
]}

Lai, WYC ^{[1
]}

Liu, CT ^{[1
]}

Liu, R ^{[1
]}

Pai, CS ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650418

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：437 / 440

页数：4

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