Impact of plasma-charging damage polarity on MOSFET noise

被引：4

作者：

Cheung, KP ^{[1
]}

Martin, S ^{[1
]}

Misra, D ^{[1
]}

Steiner, K ^{[1
]}

Colonell, JI ^{[1
]}

Chang, CP ^{[1
]}

Lai, WYC ^{[1
]}

Liu, CT ^{[1
]}

Liu, R ^{[1
]}

Pai, CS ^{[1
]}

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650418

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：437 / 440

页数：4

共 50 条

[21] Plasma charging damage: An overview [J].

McVittie, JP .

1996 1ST INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE, 1996, :7-10

[22] Use of adaptive network fuzzy inference system to predict plasma charging damage on electrical MOSFET properties [J].

Kim, Byungwhan ;

Kwon, Hee Ju ;

Choi, Seongjin .

EXPERT SYSTEMS WITH APPLICATIONS, 2009, 36 (03) :6570-6573

[23] Impact of gate area on plasma charging damage: The "reverse" antenna effect [J].

Krishnan, AT ;

Krishnan, S ;

Nicollian, P .

INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, 2002, :525-528

[24] Random Telegraph Noise as A New Measure of Plasma-Induced Charging Damage in MOSFETs [J].

Kamei, Masayuki ;

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Eriguchi, Koji ;

Ono, Kouichi .

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[25] Prediction of plasma charging induced gate oxide damage by plasma charging probe [J].

Ma, SM ;

McVittie, JP ;

Saraswat, KC .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (10) :468-470

[26] Plasma charging damage in SOI technology [J].

Mocuta, AC ;

Hook, TB ;

Chou, AI ;

Wagner, T ;

Stamper, AK ;

Khare, M ;

Gambino, JP .

2001 6TH INTERNATIONAL SYMPOSIUM ON PLASMA- AND PROCESS-INDUCED DAMAGE, 2001, :104-107

[27] Characterization of charging damage in plasma doping [J].

Henke, D ;

Walther, S ;

Weeman, J ;

Dirnecker, T ;

Ruf, A ;

Beyer, A ;

Lee, K .

IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, 2003, :201-204

[28] Impacts of antenna layout enhanced charging damage on MOSFET reliability and performance [J].

Yamada, T ;

Eriguchi, K ;

Kosaka, Y ;

Hatada, K .

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :727-730

[29] Enhanced plasma charging damage due to AC charging effect [J].

Jin, Y ;

Teo, WY ;

Hou, YT ;

Gn, FH ;

Lim, HF ;

Han, ZY ;

Li, MF .

40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2002, :359-364

[30] Impacts of Antenna Layout Enhanced Charging Damage on MOSFET Reliability and Performance [J].

Semiconductor Research Center, Matsushita Electric Ind. Co., Ltd., 3-1-1 Yagumo-nakamachi, Osaka, Moriguchi ;

570, Japan .

Tech. Dig. Int. Electron Meet. IEDM, (727-730)

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