Ge2C6H10O7- Added MgB2 Superconductor Obtained by Ex-Situ Spark Plasma Sintering

被引：8
作者：
Batalu, Dan [1 ]
Aldica, Gheorghe [2 ]
Badica, Petre [2 ]
机构：
[1] Univ Politehn Bucuresti, Bucharest 060042, Romania
[2] Natl Inst Mat Phys, Magurele 077125, Romania
来源：
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 2016年 / 26卷 / 03期
关键词：
Critical current density; Ge2C6H10O7; addition; irreversibility field; MgB2; spark plasma sintering; CRITICAL-CURRENT DENSITY; ENHANCEMENT; FIELD; GE;
D O I：
10.1109/TASC.2016.2533560
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Dense bulk samples, with relative density of 88-99%, of MgB2 added with Ge2C6H10O7 were obtained by ex situ Spark Plasma Sintering. The critical current density of the added samples is improved at high magnetic fields when compared to a pristine reference sample. The optimum composition was found for MgB2(Ge2C6H10O7)(0.0014), where J(c)(20 K) = 10(2) A/cm(2) is obtained at 5.8 T, versus 3.9 T for the reference sample. This sample has also the highest product J(c0) center dot H-irr among the added samples, and values are similar to those for the pristine MgB2 sample. There is no significant Ge substitution in the crystal lattice of MgB2, while C substitutes for B. Pinningmechanism shifts from point to grain boundary type with increasing of addition amount. The pinning shift tendency is higher at lower temperatures (5 K).
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页数：4
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