Growth, electronic and magnetic properties of doped ZnO epitaxial and nanocrystalline films

被引:12
作者
Chambers, S. A.
Schwartz, D. A.
Liu, W. K.
Kittilstved, K. R.
Gamelin, D. R.
机构
[1] Pacific NW Natl Lab, Fundamental Sci Directorate, Richland, WA 99352 USA
[2] Univ Washington, Dept Chem, Seattle, WA 98195 USA
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2007年 / 88卷 / 01期
关键词
D O I
10.1007/s00339-007-3948-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have used oxygen plasma assisted metal organic chemical vapor deposition along with wet chemical synthesis and spin coating to prepare CoxZn1-xO and MnxZn1-xO epitaxial and nanoparticle films. Co(II) and Mn(II) substitute for Zn(II) in the wurtzite lattice in materials synthesized by both methods. Room-temperature ferromagnetism in epitaxial Co: ZnO films can be reversibly activated by diffusing in Zn, which occupies interstitial sites and makes the material n-type. O-capped Co: ZnO nanoparticles, which are paramagnetic as grown, become ferromagnetic upon being spin coated in air at elevated temperature. Likewise, spin-coated N-capped Mn: ZnO nanoparticle films also exhibit room-temperature ferromagnetism. However, the inverse systems, N-capped Co: ZnO and O-capped Mn: ZnO, are entirely paramagnetic when spin coated into films in the same way. Analysis of optical absorption spectra reveals that the resonances Co( I) <-> Co( II)+ e(CB)(-) and Mn(III) <-> Mn(II)+ h(VB)(+) are energetically favorable, consistent with strong hybridization of Co ( Mn) with the conduction ( valence) band of ZnO. In contrast, the resonances Mn(I) <-> Mn( II)+ e(CB)(-) and Co(III) <-> Co( II)+ h(VB)(+) are not energetically favorable. These results strongly suggest that the observed ferromagnetism in Co: ZnO ( Mn: ZnO) is mediated by electrons ( holes).
引用
收藏
页码:1 / 5
页数:5
相关论文
共 25 条
  • [1] EFFECT OF THERMOCHEMICAL REDUCTION ON THE ELECTRICAL, OPTICAL-ABSORPTION, AND POSITRON-ANNIHILATION CHARACTERISTICS OF ZNO CRYSTALS
    DELACRUZ, RM
    PAREJA, R
    GONZALEZ, R
    BOATNER, LA
    CHEN, Y
    [J]. PHYSICAL REVIEW B, 1992, 45 (12): : 6581 - 6586
  • [2] Magnetic properties of mn-doped ZnO
    Fukumura, T
    Jin, ZW
    Kawasaki, M
    Shono, T
    Hasegawa, T
    Koshihara, S
    Koinuma, H
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (07) : 958 - 960
  • [3] Production of nitrogen acceptors in ZnO by thermal annealing
    Garces, NY
    Giles, NC
    Halliburton, LE
    Cantwell, G
    Eason, DB
    Reynolds, DC
    Look, DC
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (08) : 1334 - 1336
  • [4] Magnetization dependence on electron density in epitaxial ZnO thin films codoped with Mn and Sn
    Ivill, M
    Pearton, SJ
    Norton, DP
    Kelly, J
    Hebard, AF
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 97 (05)
  • [5] Jorgensen C.K., 1970, PROG INORG CHEM, V12, P101
  • [6] Ferromagnetic properties of Zn1-xMnxO epitaxial thin films
    Jung, SW
    An, SJ
    Yi, GC
    Jung, CU
    Lee, SI
    Cho, S
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (24) : 4561 - 4563
  • [7] Kittilstved K. R., 2005, PHYS REV LETT, V94, P147
  • [8] Electronic structure origins of polarity-dependent high-TC ferromagnetismin oxide-diluted magnetic semiconductors
    Kittilstved, KR
    Liu, WK
    Gamelin, DR
    [J]. NATURE MATERIALS, 2006, 5 (04) : 291 - 297
  • [9] KITTILSTVED KR, 2005, CONDMAT0507121
  • [10] KOBAYASHI M, 2005, CONDMAT0505387