A Scalable Network Model for Electrically Tunable Ferroelectric Domain Structure in Twistronic Bilayers of Two-Dimensional Semiconductors

被引:27
作者
Enaldiev, Vladimir V. [1 ,2 ,3 ]
Ferreira, Fabio [1 ,2 ]
Fal'ko, Vladimir, I [1 ,2 ,4 ]
机构
[1] Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England
[2] Univ Manchester, Natl Graphene Inst, Manchester M13 9PL, Lancs, England
[3] RAS, Kotelnikov Inst Radioengn & Elect, Moscow 125009, Russia
[4] Univ Manchester, Henry Royce Inst, Manchester M13 9PL, Lancs, England
基金
英国工程与自然科学研究理事会;
关键词
Ferroelectrics; twistronic heterostructures; domain wall network; van der Waals heterostructures; INTERLAYER EXCITONS; ANGLE; INSULATOR;
D O I
10.1021/acs.nanolett.1c04210
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Moire structures in small-angle-twisted bilayers of two-dimensional (2D) semiconductors with a broken-symmetry interface form arrays of ferroelectric (FE) domains with periodically alternating out-of-plane polarization. Here, we propose a network theory for the tunability of such FE domain structure by applying an electric field perpendicular to the 2D crystal. Using multiscale analysis, we derive a fully parametrized string-theory-like description of the domain wall network (DWN) and show that it undergoes a qualitative change, after the arcs of partial dislocation (PD) like domain walls merge (near the network nodes) into streaks of perfect screw dislocations (PSD), which happens at a threshold displacement field dependent on the DWN period.
引用
收藏
页码:1534 / 1540
页数:7
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