Improved n-Type 4H-SiC Epitaxial Radiation Detectors by Edge Termination

被引：22
|
作者：
Nguyen, Khai V. [1 ]
Mannan, Mohammad A. [2 ]
Mandal, Krishna C. [1 ]
机构：
[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
[2] Intel Corp, Portland Technol Dev, Hillsboro, OR 97129 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2015年 / 62卷 / 06期
关键词：
4H-SiC; deep level transient spectroscopy; edge termination; epitaxial layer; Schottky barrier detector; DEEP LEVELS; SUBSTRATE;
D O I：
10.1109/TNS.2015.2496902
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new edge termination with SiO2 and Si3N4 passivating layers has been developed and is shown to be a very effective method for improving energy resolution of 20 mu m n-type 4H-SiC epilayer Schottky barrier radiation detectors. The junction properties of the fabricated detectors before and after edge termination were studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements. A thermionic emission model applied to the forward I-V characteristics showed surface barrier height of similar to 1.4 eV and diode ideality factor of similar to 1.1. The C-V measurements showed a doping concentration of 1.8 x 10(14) cm(-3) which ensured a fully depleted (similar to 20 mu m) detector at bias voltages as low as similar to 70 V. Alpha spectroscopy measurements revealed an improved energy resolution from similar to 0.7% to similar to 0.4% for 5.48 MeV alpha particles. Deep level transient spectroscopy (DLTS) measurements have shown a decreased concentration of Z(1/2) defect levels in detectors following edge termination.
引用
收藏
页码：3199 / 3206
页数：8
相关论文
共 50 条
  • [31] Fabrication and simulation of 4H-SiC PiN diodes having mesa guard ring edge termination
    Sankin, I
    Dufrene, JB
    Merrett, JN
    Casady, JB
    SILICON CARBIDE AND RELATED MATERIALS - 2002, 2002, 433-4 : 879 - 882
  • [32] A Near Ideal Edge Termination Technique for 4500V 4H-SiC Devices: The Hybrid Junction Termination Extension
    Sung, Woongje
    Baliga, B. J.
    IEEE ELECTRON DEVICE LETTERS, 2016, 37 (12) : 1609 - 1612
  • [33] High-barrier Schottky contact on n-type 4H-SiC epitaxial layer and studies of defect levels by deep level transient spectroscopy (DLTS)
    Nguyen, Khai V.
    Pak, Rahmi O.
    Oner, Cihan
    Mannan, Mohammad A.
    Mandal, Krishna C.
    HARD X-RAY, GAMMA-RAY, AND NEUTRON DETECTOR PHYSICS XVII, 2015, 9593
  • [34] Bevel Junction Termination Extension-A New Edge Termination Technique for 4H-SiC High-Voltage Devices
    Sung, Woongje
    Huang, Alex Q.
    Baliga, B. Jayant
    IEEE ELECTRON DEVICE LETTERS, 2015, 36 (06) : 594 - 596
  • [35] Isothermal annealing study of the EH1 and EH3 levels in n-type 4H-SiC
    Alfieri, G.
    Mihaila, A.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2020, 32 (46)
  • [36] Electrically active defects induced by thermal oxidation and post-oxidation annealing of n-type 4H-SiC
    Kumar, P.
    Bathen, M. E.
    Martins, M. I. M.
    Prokscha, T.
    Grossner, U.
    JOURNAL OF APPLIED PHYSICS, 2024, 135 (18)
  • [37] Identification of Defects Limiting the Carrier Lifetime in n- Epitaxial Layers of 4H-SiC
    Klein, P. B.
    SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 193 - 198
  • [38] Dependence of humidity-stress impact on passivation film for edge termination area in 4H-SiC diodes
    Matsushima, Hiroyuki
    Mori, Yuki
    Shima, Akio
    Iwamuro, Noriyuki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 59 (10)
  • [39] 4H-SiC P-N diode using internal ring(IR) termination technique
    Song, GH
    Kim, HW
    Bahng, W
    Kim, SC
    Kim, NK
    SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 1041 - 1044
  • [40] Fast epitaxial growth of 4H-SiC by chimney-type hot-wall CVD
    Fujihira, K
    Kimoto, T
    Matsunami, H
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 175 - 178
12345