Improved n-Type 4H-SiC Epitaxial Radiation Detectors by Edge Termination

被引：22
|
作者：
Nguyen, Khai V. [1 ]
Mannan, Mohammad A. [2 ]
Mandal, Krishna C. [1 ]
机构：
[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
[2] Intel Corp, Portland Technol Dev, Hillsboro, OR 97129 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2015年 / 62卷 / 06期
关键词：
4H-SiC; deep level transient spectroscopy; edge termination; epitaxial layer; Schottky barrier detector; DEEP LEVELS; SUBSTRATE;
D O I：
10.1109/TNS.2015.2496902
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new edge termination with SiO2 and Si3N4 passivating layers has been developed and is shown to be a very effective method for improving energy resolution of 20 mu m n-type 4H-SiC epilayer Schottky barrier radiation detectors. The junction properties of the fabricated detectors before and after edge termination were studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements. A thermionic emission model applied to the forward I-V characteristics showed surface barrier height of similar to 1.4 eV and diode ideality factor of similar to 1.1. The C-V measurements showed a doping concentration of 1.8 x 10(14) cm(-3) which ensured a fully depleted (similar to 20 mu m) detector at bias voltages as low as similar to 70 V. Alpha spectroscopy measurements revealed an improved energy resolution from similar to 0.7% to similar to 0.4% for 5.48 MeV alpha particles. Deep level transient spectroscopy (DLTS) measurements have shown a decreased concentration of Z(1/2) defect levels in detectors following edge termination.
引用
收藏
页码：3199 / 3206
页数：8
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