Cat-CVD Passivation Realizing Extremely Low Surface Recombination Velocity < 0.2 cm/s in Solar Cell Structure

被引：0

作者：

Nguyen, Cong Thanh ^{[1
]}

Koyamal, Koichi ^{[1
]}

Terashimal, Shigeki ^{[1
]}

Okamoto, Chikao ^{[2
]}

Sugiyama, Shuichiro ^{[2
]}

Ohdaira, Keisuke ^{[1
]}

Matsumura, Hideki ^{[1
]}

机构：

[1] JAIST, 1-1 Asahidai, Nomi, Ishikawa 9231292, Japan

[2] Sharp Co Ltd, 282-1 Hajikami, Nara 6392198, Japan

来源：

2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2016年

关键词：

surface cleaning; surface passivation; amorphous silicon; silicon nitride; crystalline silicon; STEM; carrier lifetimes; surface recombination velocity; photovoltaic cells;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We develop a new chemical cleaning method for crystalline silicon (c-Si), which is perfectly suitable for surface passivation by Cat-CVD SiNJa-Si stacked layers to satisfy the most essential factors for fabrication of high efficient c-Si solar cells. Cat-CVD passivation realizes extremely low surface recombination velocity (SRV) lower than 0.2 cm/s. A sufficient resistance to chemical process is also confirmed to make the fabrication of back-contact high efficient solar cells easier. In the present work, the superiority of Cat-CVD passivation is clearly verified and the feasibility of its industrial implementation is implied for production of higher efficient c-Si solar cells.

引用

页码：1169 / 1172

页数：4

Cat-CVD Passivation Realizing Extremely Low Surface Recombination Velocity &lt; 0.2 cm/s in Solar Cell Structure

Cat-CVD Passivation Realizing Extremely Low Surface Recombination Velocity < 0.2 cm/s in Solar Cell Structure